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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Rivista
Codice:
E122738
ISSN:
0168-583X
  • Dati Generali

Dati Generali

Pubblicazioni (303)

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"Disorder creation and annealing in Hg implanted CdTe
Articolo
14N(?,p)17O nuclear reaction cross-section at 4.9-6.1 MeV
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2 MeV Si Ion Implantation Damage in Relaxed Si1-xGex
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2 MeV Si ion implantation damage in relaxed Si1-xGex
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2-DIMENSIONAL PROFILING BY SELECTIVE ETCHING - THE ROLE OF IMPLANT INDUCED SECONDARY DEFECTS
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3D Structure of liquid sprays: X-ray u-radiography and tomography by polycapillary based technique
Articolo
57Fe Mössbauer studies on 57Mn* implanted InP and InAs
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57Fe Mössbauer studies on 57Mn* implanted InP and InAs
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A Theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration
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A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon
Articolo
A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si
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A low energy ion scattering investigation of the structure of bilayer islands of nanometric size in the initial stages of growth of iron on Cu3Au (001)
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A multi-scale atomistic study of the interstitials agglomeration in crystalline Si
Articolo
A straightforward experimental method to evaluate the Lamb-Mossbauer factor of a Co-57/Rh source
Articolo
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data
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A velocity map imaging apparatus for gas phase studies at FERMI@Elettra
Articolo
AFM anodization studied by spectromicroscopy
Articolo
Acceleration with self-injection for an all-optical radiation source at LNF
Articolo
Active waveguides produced in lithium fluoride by He+ implantation
Articolo
Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation
Articolo
An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing
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An enhanced approach to numerical modeling of heavily irradiated silicon devices
Articolo
An investigation of the structure of liquid Zn by X-ray absorption spectroscopy
Articolo
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model.
Articolo
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model
Articolo
Angular distribution and expansion of laser ablation plumes measured by fast intensified charge coupled device photographs
Articolo
Assessment of the weathering effects on cellulose based materilas trough a multianalytical approach
Articolo
Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
Articolo
Atomistic simulation of ion channeling in heavily doped Si : As
Articolo
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
Articolo
Benchmark measurements of non-Rutherford proton elastic scattering cross section for boron
Articolo
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC
Articolo
Bombardment-induced compositional change in MgAl2O4, MgO and Al2O3
Articolo
Channeling characterization of defects in silicon: an atomistic approach
Articolo
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling
Articolo
Characterization of a UV VUV light source based on a gas-target ns-laser-produced plasma
Articolo
Characterization of graphene oxide film by implantation of low energy copper ions
Articolo
Characterization of thermally treated Mo/Si multilayer mirrors with standing wave-assisted EXAFS
Articolo
Charge collection uniformity and irradiation effects of synthetic diamond detectors studied with a proton micro-beam
Articolo
Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon
Articolo
Charge states distribution of 3350 kev He ions channeled in silicon
Articolo
Chemical selectivity and energy transfer mechanisms in the radiation-induced modification of polyethersulphone
Articolo
Comparative analysis of extended defects depth prof ile in silicon by Rutherford Backscattering, X-rays and electron microscopy
Articolo
Comparative study of metal and non-metal ion implantation in polymers: Optical and electrical properties
Articolo
Comparison between computed and measured response of silicon strip detectors exposed to carbon, calcium and ruthenium ion beams
Articolo
Complementary use of PIXE-alpha and XRF portable systems for the non-destructive and in situ characterization of gemstones in museums
Articolo
Complementary use of PIXE-alpha and XRF portable systems for the non-destructive and in situ characterization of gemstones in museums
Articolo
Compositional evolution of Pd-based nanoclusters under thermal annealing in ion implanted SiO2
Articolo
Crystal undulator experiment at IHEP
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon
Articolo
Damage profiles in as-implanted <100> Si crystals: strain by x-ray diffractometry versus interstitials by RBS-channeling
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Damage profiles in as-implanted silicon: Fluence dependence
Articolo
Deceleration of MeV antiprotons and muons to keV energies -- the anticyclotron A progress report
Articolo
Dechanneling by misfit dislocations in III-V semiconductor heterostructures
Articolo
Dechanneling cross section for misfit dislocations
Articolo
Defect Engineering of Advanced Semiconductor Device
Articolo
Defect engineering and micromachining of Lithium Niobate by ion implantation
Articolo
Defect evolution in ion implanted crystalline Si probed by in situ conductivity measurements
Articolo
Description of a flexible cell for in situ X-ray and far-IR characterization of the surface of powdered materials
Articolo
Desktop X-ray tomography for low contrast samples
Articolo
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra
Articolo
Diethynyl-thiophene adsorbed on Cu(100) investigated by NEXAFS and XPS
Articolo
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison
Articolo
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation
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Diffusion and clustering of supersaturated carbon in sigec layers under oxidation
Articolo
Diffusion of hydrogen implanted in alpha-quartz during air annealing
Articolo
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy
Articolo
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy
Articolo
Dopant behaviour and damage annealing in silicon implanted with 1 kev arsenic
Articolo
Dose-rate influence on the defect production in mev proton-implanted float-zone and epitaxial n-type silicon
Articolo
Dosimetry for electron Intra-Operative RadioTherapy: Comparison of output factors obtained through alanine/EPR pellets, ionization chamber and Monte Carlo-GEANT4 simulations for IORT mobile dedicate accelerator
Articolo
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implamtation of crystalline silicon
Articolo
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon
Articolo
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distribution
Articolo
EFFECTS OF THE BEHAVIOUR OF THE PROTON INDUCED ISOTOPES PRODUCTION ON THE ANALYSIS OF ANCIENT cOINS
Articolo
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF BF2+ SELF-ANNEALED IMPLANTATION
Articolo
ENERGY DEPOSITION MECHANISMS AND RADIATION-INDUCED REACTIONS IN PMDA-ODA POLYIMIDE
Articolo
ENERGY-LOSS AND EQUILIBRIUM CHARGE-DISTRIBUTION OF NITROGEN-IONS TRANSMITTED THROUGH THIN SILICONCRYSTALS
Articolo
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OF B IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON
Articolo
ESTRA-FitEXA: A software package for EXAFS data analysis
Articolo
EVOLUTION OF LOW-FLUENCE HEAVY-ION DAMAGE IN SI UNDER HIGH-ENERGY ION IRRADIATION
Articolo
EXAFS study on Ag-doped silicate glasses irradiated with low-mass ions
Articolo
EXAFS study on metal cluster doped silica glass obtained by ion implantation procedures
Articolo
Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
Articolo
Effect of ultrasmall Au-Ag aggregates formed by ion implantation in Er-implanted silica on the 1.54 mu m Er3+ luminescence
Articolo
Effects of Ne+ and Ar+ ion bombardment on Fe/SiO2 bi-layers studied using RBS
Articolo
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
Articolo
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
Articolo
Effects of the behaviour of the proton-induced isotopes production on the analysis of ancient alloys
Articolo
Effects of the behaviour of the proton-induced isotopes production on the analysis of ancient alloys
Articolo
Efficient two-step Positronium laser excitation to Rydberg levels
Articolo
Electrical activation and lattice location of B and Ga impurities implanted in Si
Articolo
Electroluminescence properties of SiOx layers implanted with rare earth ions
Articolo
Electronic transport signatures of common defects in irradiated graphene-based systems
Articolo
Emittance dependence on anode morphology of an ion beam provided by laser ablation
Articolo
Emittance evaluation of electron beams produced by photoemission
Articolo
Energy loss and equilibrium charge distribution of nitrogen ions transmitted through thin silicon crystals
Articolo
Epitaxial recrystallization of alkali-ion implanted alpha-quartz
Articolo
Erratum: Damage profiles in as-implanted (100) Si crystals: Strain by X-ray diffractometry versus interstitials by RBS-channeling (Nucl. Instr. and Meth. B vol 120, pg 64, 1996)
Articolo
Evaluation of the excess and clustered silicon profiles in a silicon implanted SiO2 layer
Articolo
Experimental set-up for time resolved small angle X-ray scattering studies of nanoparticles formation using a free-jet micromixer
Articolo
External micro-PIXE analysis of fluid inclusions: Test of the LABEC facility on samples of quartz veins from Apuan Alps (Italy).
Articolo
Fabrication of channel waveguides in Er3+-doped tellurite glass via N+ ion implantation
Articolo
Fabrication of optical channel waveguides in crystals and glasses using macro- and micro ion beams
Articolo
Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
Articolo
Fluorescence from the collimator in Si-PIN and Si-Drift detectors: problems and solutions for the XRF analysis of archaeological and historical materials
Articolo
Fluorine in Ge: Segregation and EOR-defects stabilization
Articolo
Fluorine incorporation during Si solid phase epitaxy
Articolo
Formation and structure of Sn and Sb nanoclusters in thin SiO2 films
Articolo
Formation of slab waveguides in eulytine type BGO and CaF2 crystals by implantation of MeV nitrogen ions.
Articolo
Formation, evolution and annihilation of interstitial clusters in ion implanted Si
Articolo
Geant4 simulations of the lead fluoride calorimeter
Articolo
Geochemical processes in Venice Lagoon by PIXE technique: an overview.
Articolo
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal
Articolo
Growth and oxidation of Na on Ag(001): a MDS study
Articolo
He implantation in Si for B diffusion control
Articolo
He* interaction with soft matter surfaces: Ultra thin L-cysteine films
Articolo
Heat-induced versus particle-beam-induced chemistry in polyimide
Articolo
High fe solubility in InP by high temperature ion implantation
Articolo
Highly antibacterial UHMWPE surfaces by implantation of titanium ions
Articolo
Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon
Articolo
IBA study of SiGe/SiO2 nanostructured multilayers
Articolo
INTERFACE EVOLUTION AND EPITAXIAL REALIGNMENT IN POLYCRYSTAL SINGLE-CRYSTAL SI STRUCTURES
Articolo
ION CHANNELING ANALYSIS OF EXTENDED-DEFECT ANNEALING IN SILICON BY RAPID THERMAL-PROCESSES
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ION-ASSISTED CRYSTALLIZATION IN SILICON - EPITAXY AND GRAIN-GROWTH
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ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2
Articolo
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF IMPLANTED AND CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON
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In situ X-ray syncrotron study of organic semiconductor ultrathin films growth
Articolo
Incorporation of active Fe impurities in GaInP by High Temperature Ion implantation
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Incorporation of active Fe impurities in GaInP by high temperature ion implantation
Articolo
Influence of annealing atmosphere on metal and metal alloy nanoclusters produced by ion implantation in silica
Articolo
Influence of impurities on the density of states at the fermi level in the c(6 x 4)-C-60/Ag(100) two-dimensional superstructure
Articolo
Influence of impurities on the density of states at the fermi level in the c(6 × 4)-C60/Ag(1 0 0) two-dimensional superstructure
Articolo
Influence of post-implantation thermal and laser annealing on the stability of metal-alloy nanoclusters in silica
Articolo
Interaction between implanted fluorine atoms and point defects in preamorphized silicon
Articolo
International Atomic Energy Agency Intercomparison of ion beam analysis software
Articolo
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra
Articolo
Investigation on the oxidation process of SiCO glasses by the means of non-Rutherford backscattering spectrometry
Articolo
Investigations on 40 MeV Li3+ ions irradiated GaN epilayers
Articolo
Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
Articolo
Ion beam analysis of mismatched epitaxial heterostructures
Articolo
Ion beam doping and epitaxial regrowth of alpha-quartz
Articolo
Ion beam erosion of amorphous materials: evolution of surface morphology
Articolo
Ion beam erosion of graphite surfaces studied by STM: Ripples, self-affine roughening and near-surface damage accumulation
Articolo
Ion beam induced reduction of metallic cations in yttria-zirconia
Articolo
Ion beam induced transient amorphous nucleation in silicon
Articolo
Ion beam synthesis of undoped and Er-doped Si nanocrystals
Articolo
Ion channeling study of P implantation damage in CdTe
Articolo
Ion implantation doping for optoelectronic applications
Articolo
Ion implantation induced damage in relaxed Si0.75Ge0.25
Articolo
Ion irradiation of AZO thin films for flexible electronics
Articolo
Ion sculpting: A tool for tuning magnetic anisotropy in ultrathin films
Articolo
Ion sputtered surfaces as templates for carbon nanotubes alignment and deformation
Articolo
Ion transmission spectroscopy of pores filled with Au nanoparticles
Articolo
Iso-concentration study of atomistic mechanism of B diffusion in Si
Articolo
Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation
Articolo
Laser irradiations of advanced targets promoting absorption resonance for ion acceleration in TNSA regime
Articolo
Laser-plasma acceleration of electrons for radiobiology and radiation sources
Articolo
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si
Articolo
Leaky mode suppression in planar optical waveguides written in Er:TeO2-WO3 glass and CaF2 crystal via double energy implantation with MeV N+ ions
Articolo
Local behaviour of negative thermal expansion materials
Articolo
Local structure and electronic properties in colossally magnetoresistive thin film of La0.87Na0.13MnO3by Mn-K edge EXAFS and XANES
Articolo
Local structure and magneto-transport in Sr2FeMoO6oxides
Articolo
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation
Articolo
MARISS study on ion yields of Ne+ scattered from III-V compound semiconductors
Articolo
MASK EDGE EFFECTS IN HIGH-ENERGY IMPLANTS - DOPANT AND DEFECT DISTRIBUTIONS
Articolo
Magnetic properties of Co and Ni based alloy nanoparticles dispersed in a silica matrix
Articolo
Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation
Articolo
Mapping of non-planar surfaces and film conformality by alpha-particle energy loss spectroscopy
Articolo
Maskless nano-implant of 20 keV Ga+ in bulk Si(1 0 0) substrates
Articolo
Materials Issues and Device Performances for Light Emitting Er-implanted Si
Articolo
MeV energy implantation of Fe in InP
Articolo
Mechanism of de-activation and clustering of B in Si at extremely high concentration
Articolo
Mechanism of de-activation and clustering of B in Si at extremely high concentration
Articolo
Mg K-edge XANES of sepiolite and palygorskite
Articolo
Micro ion beam analysis for the erosion of beryllium marker tiles in a tokamak limiter
Articolo
Micro-beam and pulsed laser beam techniques for the micro-fabrication of diamond surface and bulk structures
Articolo
Migration and interaction properties of ion beam generated point defects in c-Si
Articolo
Modification of the etching properties of x-cut Lithium Niobate by ion implantation
Articolo
Monitoring the crystallization process of nano-confined organic molecules by synchrotron X-ray diffraction
Articolo
Multi-technique characterization of gold electroplating on silver substrates for cultural heritage applications
Articolo
Multi-technique study of He+ micro-irradiation effects on natural quartz crystals contained in archaeological pottery
Articolo
Nanocluster formation in silicate glasses by sequential ion implantation procedures
Articolo
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications
Articolo
Network modification and epitaxial recrystallisation of ion-implanted alpha-quartz
Articolo
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon
Articolo
Ni atomic environment in epitaxial NiO layers on Ag(001)
Articolo
Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon
Articolo
Nuclear energy and cascade effects on the ion-assisted crystal nucleation in amorphous silicon
Articolo
ON THE DETERMINATION OF 2-DIMENSIONAL CARRIER DISTRIBUTIONS
Articolo
On the design of a monolithic 4-bounce high resolution X-ray monochromator
Articolo
Onset of magnetic anisotropy in ion-sculpted ultrathin magnetic films
Articolo
Optical Doping of Materials by Erbium Ion Implantation
Articolo
Optical and electrical doping of silicon with holmium
Articolo
Optical and electrical properties of polycarbonate matrices implanted by high energy Cu ions
Articolo
Optical transient in ion irradiated silicon carbide
Articolo
Oxygen - Impurity Interactions in Crystalline Silicon: the Cases of Aluminum and Erbium
Articolo
PIXE Analysis to Study Metal Diffusion and Sedimentation Phenomena in Venice Lagoon.
Articolo
PIXE contribution for a database of Phoenician pottery in Lebanon
Articolo
PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON
Articolo
Pd-based alloy nanoclusters in ion-implanted silica: Formation and stability under thermal annealing
Articolo
Penning de-excitation of spin-polarised metastable He atoms on magnetic surfaces: Mg on Fe
Articolo
Photofragmentation of organic molecules of biological interest: The pyrimidine and 2Br-pyrimidine cases
Articolo
Photoionization and Velocity Map Imaging spectroscopy of atoms, molecules and clusters with Synchrotron and Free Electron Laser radiation at Elettra
Articolo
Physical insight into the phenomenon of B clustering in Si at room temperature
Articolo
Pillar defects, a new type of track in Pb-irradiated Bi-2212 thin films: Nanostructural study and influence on the irreversibility line
Articolo
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon
Articolo
Plasma treatment of expanded PTFE offers a way to a biofunctionalization of its surface
Articolo
Point defect diffusion and clustering in ion implanted c-Si
Articolo
Point defect engineering in preamorphized silicon enriched with fluorine
Articolo
Polymer film degradation under ion irradiation studied by ion beam induced luminescence (IBIL) and optical analyses
Articolo
Polymer processing by a low energy ion accelerator
Articolo
Production of niobium titanium nitride coatings by reactive diffusion for superconducting cavity applications
Articolo
Production of waveguides in LiF by MeV ion bombardment.
Articolo
Proposal for a prototype of portable micro-XRF spectrometer
Articolo
Proposed antimatter gravity measurement with an antihydrogen beam
Articolo
Proton beams obtained by hydrogenated Al targets
Articolo
Proton extraction by laser ablation of transition metals
Articolo
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Articolo
Quantitative structural refinement of Mn K edge XANES in LaMnO3and CaMnO3perovskites
Articolo
RAPID THERMAL ANNEALING OF HOT IMPLANTS IN SILICON
Articolo
RBS analysis of substoichiometric TiO2-anatase thin films for visible-light photocatalysis
Articolo
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si : As
Articolo
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulations
Articolo
RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 meV Si ions
Articolo
RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for <100> axial dechanneling of He in silicon
Articolo
Radiocarbon dating versus volcanic event stratigraphy: Age modelling of Quaternary marine sequences in the coastal region of the Eastern Tyrrhenian Sea
Articolo
Radiocarbon dating versus volcanic event stratigraphy: age modelling of Quaternary marine sequences in the coastal region of the Eastern Tyrrhenian Sea
Articolo
Random and channeling stopping power of nitrogen in silicon in the 700-1500 keV range
Articolo
Reaction of Al with ammonia by pulsed laser ablation: Optical analysis and mass spectrometry
Articolo
Relaxed state of GexSi1xislands embedded in Si
Articolo
Results and perspectives in hard X-ray photoemission spectroscopy (HAXPES) from solids
Articolo
Results and perspectives in hard X-ray photoemission spectroscopy (HAXPES) from solids
Articolo
Role of Si self-interstitials on the electrical de-activation of B doped Si
Articolo
Role of self-interstitials on B diffusion in Ge
Articolo
Roman bronze artefacts from Thamusida (Morocco): Chemical and phase analyses
Articolo
Room Temperature Light Emitting Silicon Diodes Fabricated by Erbium Ion Implantation
Articolo
Room temperature defect diffusion in ion implanted c-Si
Articolo
Room temperature migration of ion beam injected point defects in crystalline silicon
Articolo
Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography
Articolo
Self-interstitial diffusion and clustering with impurities in crystalline silicon
Articolo
Self-interstitial diffusion and clustering with impurities in crystalline silicon
Articolo
Self-organization of Au nanoclusters on the SiO2 surface induced by 200 keV-Ar+ irradiation
Articolo
Semi-insulating behaviour in Fe MeV implanted n-type InP
Articolo
Sequential ion implantation of copper and cobalt in silica glass: A study by synchrotron radiation techniques
Articolo
Si nanocrystals formation by a new ion implantation device
Articolo
Si-based materials for advanced microelectronic devices: Synthesis, defects and diffusion
Capitolo di libro
Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width
Articolo
Silver nanocluster formation in ion-exchanged glasses by annealing, ion beam and laser beam irradiation: An EXAFS study
Articolo
Single- and double energy N+ ion irradiated planar optical waveguides in Er: Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths
Articolo
Size dependent hcp-to-fcc transition temperature in Co nanoclusters obtained by ion implantation in silica
Articolo
Sparc_Lab present and future.
Articolo
Spectro-microscopy of ultra-thin SiN films on Si (111)
Articolo
Spin-polarised metastable atom de-excitation at alkali-covered magnetic surfaces: Na on Fe/Ag(001)
Articolo
Stopping power of SiO2 for 0.2-3.0 MeV He ions
Articolo
Stopping power of sio2 for 0.2?3.0 mev He ions
Articolo
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED
Articolo
Structural and magnetic properties of Fe-Al silica composites prepared by sequential ion implantation
Articolo
Structural modifications and electrical properties in ion-irradiated polyimide
Contributo in Atti di convegno
Structural modifications and electrical properties in ion-irradiated polymide
Articolo
Structural modifications induced by swift heavy ions in thin films of yttria fully stabilized zirconia
Articolo
Structure and thermal stability of Au-Fe alloy nanoclusters formed by sequential ion implantation in silica (vol 250, pg 225, 2006)
Articolo
Studies on nitridation of laser evaporated III-IV group elements with gaseous ammonia and thin film deposition
Articolo
Submicron-scale patterns on ferromagnetic-antiferromagnetic Fe/NiO layers by focused ion beam (FIB) milling
Articolo
Summary of IAEA intercomparison of IBA software
Articolo
Surface magnetism during the early stages of oxygen-assisted growth of Cr on Fe(001): a SPMDS study
Articolo
Synchrotron X-ray investigation of tetracene thin films grown at different deposition fluxes
Articolo
Synchrotron radiation glancing incidence X-ray diffraction: a tool for structural investigations of ion implanted glasses
Articolo
Synchrotron radiation photoionization mass spectrometry of laser ablated species
Articolo
Synchrotron radiation studies of additives in combustion I: Water
Articolo
Synthesis of wide band gap nanocrystals by ion implantation
Articolo
Tailoring of silicon crystals for relativistic-particle channeling
Articolo
Temperature dependence of rippled corrugations induced on the Rh(110) surface via ion sputtering
Articolo
The Analysis of Bronze Alloys from the Equestrian Statue of Marco Aurelio by Means of a Thin Sample XRF Technique
Articolo
The As2V complex in silicon: Band-gap levels, migration and annealing
Articolo
The Fe/NiO interface studied by polarization dependent X-ray absorption spectroscopy
Articolo
The LILIA (laser induced light ions acceleration) experiment at LNF
Articolo
The Legnaro ion microprobe in low current experiments
Articolo
The Si surface yield as a calibration standard for RBS
Articolo
The center for production of single-photon emitters at the electrostaticdeflector line of the Tandem accelerator of LABEC (Florence)
Articolo
The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants
Articolo
The effect of thermal treatments on the local geometry around indium in In and In+C high dose implanted Si
Articolo
The elastic (3)He+d cross section of relevance for knock-on effects in radio frequency heated ((3)He)D plasmas
Articolo
The influence of Cr-composition on the local magnetic structure of FeCr alloys
Articolo
The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals
Articolo
The symmetry of the Be(0001) surface states as determined by ARPES with variable polarization synchrotron radiation
Articolo
Time resolved photoluminescence associated with non-bridging oxygen hole centers in irradiated silica.
Articolo
Time scales of transient enhanced diffusion: Free and clustered interstitials
Articolo
Trace Metal Distribution in Aquatic System as Studied by PIXE Analysis of Water and Sediment
Articolo
Trace metal behaviour during salt and fresh water mixing in the Venice Lagoon
Articolo
Transmission diffractive patterns of large microchannel plates at soft X-ray energies
Articolo
Ultra-shallow junction by laser annealing: Integration issues and modelling
Articolo
Ultra-shallow junction by laser annealing: integration issues and modelling
Contributo in Atti di convegno
Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: Atwo-dimensional analysis
Articolo
X-RAY DETERMINATION OF LATTICE DAMAGE DEPTHPROFILES DUE TO ELECTRONIC AND NUCLEAR-ENERGY LOSSES IN SILICON IMPLANTED WITH MEV BORON IONS
Articolo
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON
Articolo
X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition
Articolo
X-ray absorption spectroscopy study of Yb2O3and Lu2O3 thin films deposited on Si(100) by atomic layer deposition
Articolo
X-ray determination of lattice damage depth-profiles due to electronic and nuclear energy losses in silicon implanted with MeV boron ions
Articolo
X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures
Articolo
X-ray micro-beam techniques and phase contrast tomography applied to biomaterials
Articolo
XPS study of radiation-induced modification of poly(butene-1-sulfone): Dependence on the energy deposition mechanism
Articolo
XRF analysis of Roman Imperial Coins
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