Charge states distribution of 0.16-3.3 mev He ions transmitted through silicon

The equilibrium charge state distribution of He ions transmitted through
silicon in a random direction was measured in the energy range 0.16-3.3
MeV. The surface contamination, investigated by back-scattering
spectrometry, amounted to a few monolayers. The measured data, integrated
with the available literature points, cover a wide range of conditions.
At the lower end (velocity about 1 a.u.) there is a consistent fraction of
neutral He and the process is strongly influenced by solid state e.ects; at
the higher end (velocity about 6 a.u.) most of the ions are stripped and
the process can be described by individual He-Si collisions. The use of a
semi-classical approach, based on the early theory of Bohr, allows for a
satisfactory description of the Heþ/He2+ ratio in the whole energy range.