Codice:
E106698
ISSN:
0255-5476
Dati Generali
Pubblicazioni (398)
1300°c annealing of 1×1020 al+ ion implanted 3C-SiC
Contributo in Atti di convegno1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
Contributo in Atti di convegno2D simulation of under-mask penetration in 4H-SiC implanted with Al(+) ions
Contributo in Atti di convegno3 × 1018 - 1 × 1019 cm-3 al+ ion implanted 4h-sic: Annealing time effect
Contributo in Atti di convegno3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP)
Contributo in Atti di convegnoAbout the hole transport analysis in heavy doped p-type 4H-SiC(Al)
Contributo in Atti di convegnoActivation energy for the post implantation annealing of 1019cm-3 and 1020 cm-3 ion implanted al in 4H SiC.
Contributo in Atti di convegnoAg growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces
Contributo in Atti di convegnoAl+ implanted 4H-SiC p(+)-i-n diodes: Evidence for post-implantation-annealing dependent defect activation
Contributo in Atti di convegnoAl+ implanted 4H-SiC: improved electrical activation and ohmic contacts
Contributo in Atti di convegnoAl+ ion implanted 4H-SiC vertical p+-i-n diodes: Processing dependence of leakage currents and OCVD carrier lifetimes
Contributo in Atti di convegnoAl+ ion implanted on-axis <0001>semi-insulating 4H-SiC
Contributo in Atti di convegnoAnalysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process
Contributo in Atti di convegnoBand offset engineering of II-VI/III-V heterointerfaces
Contributo in Atti di convegnoBuffer layer optimization for the growth of state of the art 3C-SiC/Si
Contributo in Atti di convegnoCarbon nanotubes grown by catalytic CVD on silicon based substrates for electronics applications
Contributo in Atti di convegnoCarbon-cap for ohmic contacts on n-type ion implanted 4H-SiC
Contributo in Atti di convegnoCarrier transport mechanisms in ion implanted and highly-doped p-type 4H-SiC(Al)
Contributo in Atti di convegnoCategory II and category III defects in 200 KeV Fe implanted InP
Contributo in Atti di convegnoCharacterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose
Contributo in Atti di convegnoCharacterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation
Contributo in Atti di convegnoCharacterization of electrical contacts on polycrystalline 3C-SiC thin films
Contributo in Atti di convegnoCharged particle detection properties of epitaxial 4H-SiC Schottky diodes
Contributo in Atti di convegnoComparison of bottom-up and top-down 3C-SiC NWFETs
Contributo in Atti di convegnoControlling the carbon vacancy concentration in 4H-SiC subjected to high temperature treatment
Contributo in Atti di convegnoCorrelation between current transport and defects in n+/p 6H-SiC diodes
Contributo in Atti di convegnoCorrelation between defects and electrical properties of 4H-SiC based Schottky diodes
Contributo in Atti di convegnoCurrent analysis of ion implanted p(+)/n 4H-SiC junctions: post-implantation annealing in Ar ambient
Contributo in Atti di convegnoDNA detection using SiC nanowire based transistor
Contributo in Atti di convegnoDlts study on Al+ ion implanted and 1950°c annealed p-i-n 4H-SiC vertical diodes
Contributo in Atti di convegnoDouble step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET
Contributo in Atti di convegnoDual ion beam deposition and characterization of TiOx thin films
Contributo in Atti di convegnoEffect of growth parameters on iron incorporation in semi-insulating LEC Indium Phosphide
Contributo in Atti di convegnoEffects of heat treatments on tungsten for armours in NFR
Contributo in Atti di convegnoEffects of very high neutron fluence irradiation on p(+)n junction 4H-SiC diodes
Contributo in Atti di convegnoEngineering single defects in silicon carbide bulk, nanostructures and devices
Contributo in Atti di convegnoErosion Damage in Zirconia and Zirconia Toughened Alumina
Contributo in Atti di convegnoEstimation of Activation and Compensation Ratios in Al+ ion Implanted 4H-SiC: Comparison of Two Methodologies
Contributo in Atti di convegnoExcitons and free carrier lasing in II-VI quantum wells
Contributo in Atti di convegnoFabrication of MOS capacitors by wet oxidation of p-type 4H-SiC preamorphized by nitrogen ion implantation
Contributo in Atti di convegnoFormation and annihilation of carbon vacancies in 4H-SiC
Contributo in Atti di convegnoFormation of D-Center in p-type 4H-SiC epi-layers during high temperature treatments
Contributo in Atti di convegnoForward current of Al+ implanted 4H-SiC diodes: A study on the periphery and area components
Contributo in Atti di convegnoFully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
Contributo in Atti di convegnoHetero-epitaxial single crystal 3C-SiC opto-mechanical pressure sensor
Contributo in Atti di convegnoHigh Dose Al+ Implanted and Microwave Annealed 4H-SiC
Contributo in Atti di convegnoHigh temperature variable range hopping in heavy Al implanted 4H-SiC
Contributo in Atti di convegnoImproving doping efficiency of P(+) implanted ions in 4H-SiC
Contributo in Atti di convegnoInfluence of the crystallisation process in the magnetic properties of (Fe,Co)SiB(CuNb) alloys
Contributo in Atti di convegnoInfluence of the dislocation loops on the anomalous diffusion of Fe implanted into InP
Contributo in Atti di convegnoInfluence of the injection pressure and crucible-wheel distance on the amorphous state in the Fe73.5Ta3Cu1Si13.5B9 alloy
Contributo in Atti di convegnoIon implanted lateral p+-i-n+ diodes on HPSI 4H-SiC
Contributo in Atti di convegnoIon implanted phosphorous for 4H-SiC VDMOSFETs source regions: Effect of the post implantation annealing time
Contributo in Atti di convegnoIsothermal treatment effects on the carbon vacancy in 4H silicon carbide
Contributo in Atti di convegnoKinetics modeling of the carbon vacancy thermal equilibration in 4H-SiC
Contributo in Atti di convegnoLattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs
Contributo in Atti di convegnoMicrowave annealing of Al+ implanted 4H-SiC: towards device fabrication
Contributo in Atti di convegnoMinimum ionizing particle detector based on p(+)n junction SiC diode
Contributo in Atti di convegnoModeling the microstructural and yield strength evolution of an age-hardenable Al alloy for high temperature applications
Contributo in Atti di convegnoNanocrystalline FeNbCuSiB magnetic alloys obtained by ball milling
Contributo in Atti di convegnoNanocrystallisation kinetics in Fe(73.5)X(3)Cu(1)Si(13.5)B(9) (X=Ta, Mo and Nb) alloys
Contributo in Atti di convegnoNanostructure formation in silicon photovoltaic cells by Femtosecond Laser Pulses
Contributo in Atti di convegnoNi-Al-Ti ohmic contacts on Al implanted 4H-SiC
Contributo in Atti di convegnoNi-Al-Ti ohmic contacts with preserved form factor and few 10- 4 ?cm2 specific resistance on 0.1-1 ?cm p-type 4H-SiC
Contributo in Atti di convegnoNon-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
Contributo in Atti di convegnoNumerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics
Contributo in Atti di convegnoOn the nature of the impurity atmosphere around dislocations in bulk n-type GaAs
Contributo in Atti di convegnoOrganometallic Compounds as Precursors for Chemical Vapor Deposition of Thin Films of Inorganic Materials
Contributo in Atti di convegnoPhasing crystal structures from powder data: about the use of the Harker sections
Contributo in Atti di convegnoPlasma Treatment of 3C-SiC Surfaces
ArticoloPoint defects investigation of high energy proton irradiated SiC p+-i-n diodes
Contributo in Atti di convegnoPost-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
Contributo in Atti di convegnoProcessing of CuZr based shape memory alloys
Contributo in Atti di convegnoSYNTHESIS AND PROPERTIES OF HIGH-SURFACE-AREA NI/MG/AI MIXED OXIDES VIA ANIONIC CLAY PRECURSORS
Contributo in Atti di convegnoSchottky barrier lowering in 4H-SiC Schottky UV detector
Contributo in Atti di convegnoSiC device manufacturing: How processing impacts the material and device properties
Contributo in Atti di convegnoSiC synthesis by fullerene free jets on Si(111) at low temperatures
Contributo in Atti di convegnoSimulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
Contributo in Atti di convegnoSimulation of the incomplete ionization of the n-type dopant Phosphorus in 4H-SiC, including screening by free carriers
Contributo in Atti di convegnoSolving Crystal Structures from Powder Data: The Use of a Molecular Fragment
Contributo in Atti di convegnoStatic and dynamic magnetic properties of melt-spun granular Cu100-xCox alloys
Contributo in Atti di convegnoSteady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET
Contributo in Atti di convegnoStructural characterization of alloyed Al/Ti and Ti contacts on SiC
Contributo in Atti di convegnoStructural refinements of strontium substituted hydroxylapatites
Capitolo di libroStudy of magnetic properties of Joule heated granular CoxCu100-x ribbons
Capitolo di libroStudy of the dislocation atmospheres in n-type GaAs by DSL photoetching, EBIC and microRaman measurements
Contributo in Atti di convegnoThe influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface
Contributo in Atti di convegnoToward EXPO: From the Powder Pattern to the Crystal Structure
Contributo in Atti di convegnoUltra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
Contributo in Atti di convegnoX-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC
Contributo in Atti di convegnoNo Results Found