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IEEE TRANSACTIONS ON ELECTRON DEVICES
Rivista
Codice:
E079923
ISSN:
0018-9383
Dati Generali
Dati Generali
Pubblicazioni (103)
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Ordina Pubblicazioni:
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2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
Articolo
2Self-accelerated thermal dissolution model for reset programming in unipolar resistive switching memory (RRAM) devices
Articolo
4H-SiC Detector in High Photons and Ions Irradiation Regime
Articolo
A General Equivalent Circuit Model for a Metal/Organic/Liquid/Metal System
Articolo
A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Articolo
A charge-modulated FET for detection of biomolecular processes: Conception, modeling, and simulation
Articolo
A new expression for the gain-noise relation of single-carrier avalanche photodiodes with arbitrary staircase multiplication regions
Articolo
A new method for computing nonlinear carrier diffusion in semiconductor optical devices
Articolo
A statistical model for SILC in Flash memories'
Articolo
A temperature all-silicon micro-sensor based on the thermo-optic effect
Articolo
An Unconventional Hybrid Variable Capacitor With a 2-D Electron Gas
Articolo
An analytical model for cylindrical thin-film transistors
Articolo
An improved nonlocal history-dependent model for gain and noise in avalanche photodiodes based on energy balance equation
Articolo
Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin film transistors with different LDD doping concentration.
Articolo
Atomic Defects Profiling and Reliability of Amorphous Al
2
O
3
Metal-Insulator-Metal Stacks
Articolo
Atomistic investigation of low-field mobility in graphene nanoribbons
Articolo
Atomistic modeling of gate-all-around Si-nanowire field-effect transistors
Articolo
Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si
Articolo
CW Experiments With the EU 1-MW, 170-GHz Industrial Prototype Gyrotron for ITER at KIT
Articolo
Calibration of SiC Detectors for Nitrogen and Neon Plasma Emission Using Gas-Puff Target Sources
Articolo
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
Articolo
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator
Articolo
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
Articolo
Compact modeling of variability effects in nanoscale NAND Flash memories
Articolo
Comprehensive analysis of random telegraph noise instability and its scaling in deca-nanometer Flash memories
Articolo
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modelling
Articolo
Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance
Articolo
Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors
Articolo
DENUDED ZONE STABILITY IN A SPAD DIODE AS A FUNCTION OF OUT-DIFFUSION PARAMETERS
Articolo
Dark Current in Silicon Photomultiplier Pixels: Data and Model
Articolo
Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories
Articolo
Defect generation statistics in thin gate oxides
Articolo
Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors
Articolo
Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs
Articolo
Electrical characterization of ultra-shallow junctions formed by diffusion from a CoSi2 layer
Articolo
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance
Articolo
Electronic switching in phase-change memories
Articolo
Experimental evidences of carrier distribution and behavior in frequency in a BMFET modulator
Articolo
Extraction of Schottky barrier parameters for metal-semiconductor junctions on high resistivity inhomogeneous, semiconductors
Articolo
Field-emission breakdown and electromigration in insulated planar nanoscopic contacts
Articolo
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
Articolo
Fully Deformable Organic Thin-Film Transistors With Moderate Operation Voltage
Articolo
Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories
Articolo
Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs
Articolo
Hot Carrier-Induced Degradation of Gate Overlapped Lightly Doped Drain (GOLDD) Polysilicon TFTs
Articolo
Hot carrier effects in n-channel polycrystalline silicon thin film transistors: a correlation between off- current and transconductance variations
Articolo
Hot carrier-Induced Degradation of LDD Polysilicon TFTs
Articolo
Hot-carrier induced degradation of Gate Overlapped Lightly Doped Drain (GOLDD) polysilicon thin-film transistors
Articolo
Hybrid Electrothermal Simulations of GaN HEMT Devices Based on Self-Heating Free Virtual Electrical Characteristics
Articolo
Impact of correlated generation of oxide defects on SILC and breakdown distributions
Articolo
Integration of Melting Excimer Laser Annealing in Power MOS Technology
Articolo
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications
Articolo
Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET s
Articolo
Investigation on the conduction mechanisms in metal-base vertical organic transistors by DC and LF-noise measurements
Articolo
Low-Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials
Articolo
Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors
Articolo
Modeling of Short-Channel Effects in Organic Thin-Film Transistors
Articolo
Modeling of programming and read performance in phase-change memories-Part I: cell optimization and scaling
Articolo
Modeling of programming and read performance in phase-change memories-Part II: program disturb and mixed-scaling approach
Articolo
Modeling of tunneling P/E for nanocrystal memories
Articolo
Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors
Articolo
Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device
Articolo
Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET
Articolo
Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs
Articolo
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
Articolo
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
Articolo
On the Stability of Amorphous Silicon Temperature Sensors
Articolo
Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector
Articolo
Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations
Articolo
Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
Articolo
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p(+)-i-n Diode With Al+ Ion-Implanted Emitters
Articolo
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime
Articolo
Polysilicon TFT Structures for Kink-Effect Suppression
Articolo
Polysilicon Thin Film Transistor structures for kink-effect suppression
Articolo
Power bipolar transistors with a fast recovery integrated diode
Articolo
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part I: Experimental study
Articolo
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part II: Physics-based modeling
Articolo
Semi-analytical model for the transient operation of gate-all-around charge-trap memories
Articolo
Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier
Articolo
Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon
Articolo
Silicon planar technology for single-photon optical detectors
Articolo
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells
Articolo
Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m
Articolo
Space-charge photomodulation in metal/insulator/amorphous semiconductor structures
Articolo
Statistical model for random telegraph noise in Flash memories
Articolo
Statistical profiling of SILC spot in Flash memories
Articolo
Study of multilevel programming in Programmable Metallization Cell (PMC) memory
Articolo
The Multiscale Paradigm in Electronic Device Simulation
Articolo
The role of defects on forward current in 4H-SiC p-i-n diodes
Articolo
Theory and experiment of suppressed shot noise in stress induced leakage currents
Articolo
Theory of Carriers Transport in III-Nitride Materials: State of the Art and Future Outlook
Articolo
Thin film bulk acoustic resonator gas sensor functionalized with a nanocomposite Langmuir-Blodgett layer of carbon nanotubes
Articolo
Three-dimensional simulation of charge-trap memory programming - Part I: average behavior
Articolo
Three-dimensional simulation of charge-trap memory programming - Part II: variability
Articolo
Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
Articolo
Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories
Articolo
Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors
Articolo
Tunable Spectral Responses in a Color-Sensitive CMOS Pixel for Imaging Applications
Articolo
Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions
Articolo
Two-dimensional quantum effects in nanoscale MOSFET's
Articolo
V2O5 MISFETs on H-Terminated Diamond
Articolo
Voltage snapback in amorphous-GST memory devices: Transport model and validation
Articolo
Wafer Level Integration of 3-D Heat Sinks in Power ICs
Articolo
No Results Found
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