Data di Pubblicazione:
1987
Abstract:
Abstract-The effect of a complete fabrication cycloe f a single photon
avalanche diode (SPAD) on denuded zone presence and width is
reported. The heavy diffusion stage required to create a deep guard
ring junction appears to be the most deleterious for the denuded zone
stability and the final bulk defect content.
The out-diffusion step parameters are decisive in assuring the denuded
zone stability: theu se of a chlorinated oxidizing ambient during
the out-diffusion treatment appears to be sufficient to maintain a satisfactory
denuded zone widthe ven after the heavy-diffusion stagTeh. e
role of process-induced defects, in particular of the interstitials, is
stressed out.
avalanche diode (SPAD) on denuded zone presence and width is
reported. The heavy diffusion stage required to create a deep guard
ring junction appears to be the most deleterious for the denuded zone
stability and the final bulk defect content.
The out-diffusion step parameters are decisive in assuring the denuded
zone stability: theu se of a chlorinated oxidizing ambient during
the out-diffusion treatment appears to be sufficient to maintain a satisfactory
denuded zone widthe ven after the heavy-diffusion stagTeh. e
role of process-induced defects, in particular of the interstitials, is
stressed out.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Poggi, Antonella; Susi, Enrichetta
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