Role of point defects on B diffusion in Ge

Academic Article
Publication Date:
2012
abstract:
[object Object]
Iris type:
01.01 Articolo in rivista
Keywords:
Boron; Diffusion; Germanium; Ion implantation; Point-defects
List of contributors:
Handle:
https://iris.cnr.it/handle/20.500.14243/250229
Published in:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Journal