Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling

Academic Article
Publication Date:
2000
Iris type:
01.01 Articolo in rivista
Keywords:
TRANSIENT ENHANCED DIFFUSION; PHYSICAL-MECHANISMS; SIMULATION
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/172040
Published in:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Journal