Ultrashallow profiling of semiconductors by secondary ion mass spectrometry: methods and applications

We have investigated in detail the capability of a CAMECA IMS-4f magnetic-sector SIMS instrument in terms of ultimate depth resolution; accuracy, quantification in the uppermost layers, sensitivity and dynamic range, as well as fastness and ease of measurement. A method to obtain ultrahigh depth resolutions will be demonstrated and discussed. The study has primarily been finalized to the investigation of ultrashallow boron implants in silicon. Specific applications to the above-mentioned material will be presented. In particular, it will be shown that, taking advantage of the developed measurement protocol, it was possible to perform a detailed investigation on the atomic transport properties of the sub-keV energy implanted boron in silicon.