A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf)
Academic Article
Publication Date:
2013
abstract:
[object Object]
Iris type:
01.01 Articolo in rivista
List of contributors:
Fanciulli, Marco; Cianci, Elena; Lamperti, Alessio; Molle, Alessandro; Wiemer, Claudia; Spiga, Sabina
Published in: