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DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART A, DEFECT AND DIFFUSION FORUM
Rivista
Codice:
E050721
ISSN:
1012-0386
Dati Generali
Dati Generali
Pubblicazioni (3)
Interaction and migration properties of ion beam induced point defects in crystalline silicon: Basic research and technological relevance
Articolo
Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation
Articolo
XPEEM study of liquid Au-Si droplets on Si(111) near to the eutectic point
Articolo
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