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MICROELECTRONICS AND RELIABILITY
Rivista
Codice:
E109974
ISSN:
0026-2714
Dati Generali
Dati Generali
Pubblicazioni (40)
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A comparison between normally and highly accelerated electromigration tests
Articolo
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS
Articolo
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS
Articolo
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
Articolo
A percolative simulation of dielectric-like breakdown
Articolo
A specimen-current branching approach for FA of long Electromigration test lines
Articolo
Additional microstructural analysis on the samples examined in the paper 'Are high resolution resistometric methods really useful for the early detection of electromigration damage?'
Articolo
Ambipolar field-effect transistor based on ?,?- dihexylquaterthiophene and ?,?-diperfluoroquaterthiophene vertical heterojunction
Articolo
Ambipolar field-effect transistor based on ?,?- dihexylquaterthiophene and ?,?-diperfluoroquaterthiophene vertical heterojunction
Articolo
Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction
Articolo
An engineering approach to Bayes estimation for the Weibull distribution
Articolo
An improved isothermal electromigration test for Cu-damascene characterization
Articolo
Analysis of the effect of the gate oxide breakdown on SRAM stability
Articolo
Are high resolution resistometric methods really useful for the early detection of electromigration damage?
Articolo
Bayes credibility intervals for the left-truncated exponential distribution
Articolo
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
Articolo
Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization
Articolo
Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
Articolo
Dependence of post-breakdown conduction on gate oxide thickness
Articolo
Distribution and generation of traps in SiO2/Al2O3 gate stacks
Articolo
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
Articolo
Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics
Articolo
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
Articolo
Evidence of Chlorine Ion Penetration in InP/InAsP Quantum Well Structures during Dry Etching Processes and Effects of induced-Defects on the Electronic and Structural Behaviour
Articolo
Hot carrier e ffects in polycrystalline silicon thin-film transistors: analysis of electrical characteristics and noise performance modifications
Articolo
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric
Articolo
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability
Articolo
LOCOS induced stress effects on SOI bipolar devices
Articolo
Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage
Articolo
On the reliability of instruments for environmental monitoring: some practical considerations.
Articolo
Performance increase of tandem amorphous/microcrystalline Si PV devices under variable illumination and temperature conditions
Articolo
Process dependence of BTI reliability in advanced HK MG stacks
Articolo
Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
Articolo
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines
Articolo
Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices
Articolo
Structure of the oxide damage under progressive breakdown
Articolo
Study of degradation mechanisms in compound semiconductors bades devices by SEM-cathodoluminescence
Articolo
Study of nanocrystal memory integration in a Flash-like NOR device
Articolo
Test structures for dielectric spectroscopy of thin films at microwave frequencies
Articolo
The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers
Articolo
No Results Found
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