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JOURNAL DE PHYSIQUE III
Rivista
Codice:
E090089
ISSN:
1155-4320
Dati Generali
Dati Generali
Pubblicazioni (4)
Electrical properties of silver impurities and their annealing behaviour in p-type Fz silicon
Articolo
Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield
Articolo
ON THE INTRINSIC GETTERING OF CU IN P-TYPE SILICON
Articolo
Strain measurements in thin film structures by convergent beam electron diffraction
Articolo
No Results Found
