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MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH

Journal
Identifier:
E184241
ISSN:
1092-5783
  • Overview

Overview

Outputs (3)

GaN growth by remote plasma MOCVD: Chemistry and kinetics by real time ellipsometry
Academic Article
Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
Academic Article
nfluence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells
Conference Paper
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