nfluence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.