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IEEE ELECTRON DEVICE LETTERS (PRINT)
Rivista
Codice:
E079839
ISSN:
0741-3106
Dati Generali
Dati Generali
Pubblicazioni (41)
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Ordina Pubblicazioni:
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14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs
Articolo
A CMOS, fully integrated sensor for electronic detection of DNA hybridization
Articolo
A CMOS, fully integrated sensor for electronic detection of DNA hybridization
Articolo
A narrow-line-width Josephson oscillator for the millimeter-wave region
Articolo
A reliable technique for experimental evaluation of crystallization activation energy in PCMs
Articolo
A temperature transducer based on a low-voltage organic thin-film transistor detecting pyroelectric effect
Articolo
Al+ Implanted 4H-SiC p(+)-i-n Diodes: Forward Current Negative Temperature Coefficient
Articolo
An AlGaAs-GaAs-based RCE MSM photodetector with delta modulation doping
Articolo
Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors
Articolo
Analysis of phase distribution in phase-change non-volatile memories
Articolo
Crosstalk characterization in Geiger-mode avalanche photodiode arrays
Articolo
Diamond Detectors for UV and X-ray Source Imaging
Articolo
Edge Effects in Self-Heating-Related Instabilities in p-Channel Polycrystalline-Silicon Thin-Film Transistors
Articolo
Effect of floating-gate polysilicon depletion on the erase efficiency of NAND Flash memories
Articolo
Electronic switching effect and phase-change transition in chalcogenide materials
Articolo
Equivalent cell approach for extraction of the SILC distribution in Flash EEPROM cells
Articolo
Evidence of Correlated Mobility Fluctuations in p-type Organic Thin Film Transistors
Articolo
Experimental study of data retention in nitride memories by temperature and field acceleration
Articolo
Extraction of Defects Properties in Dielectric Materials From I-V Curve Hysteresis
Articolo
Impact of control-gate and floating-gate design on the electron-injection spread of decananometer NAND Flash memories
Articolo
Impact of electrode materials on resistive-switching memory programming
Articolo
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash
Articolo
Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors
Articolo
Investigation of the electron-injection spread in barrier-engineered NAND Flash memories
Articolo
On the Crossing-Point of 4H-SiC Power Diodes Characteristics
Articolo
On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs
Articolo
Optically modulated high-sensitivity heterostructure varactor
Articolo
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures
Articolo
Parasitic reset in the programming transient of PCMs
Articolo
Random telegraph noise effect on the programmed threshold-voltage distribution of Flash memories
Articolo
Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices
Articolo
Role of fron contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance
Articolo
Simulation of Graphene Nanoribbon Field-Effect Transistors
Articolo
Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator
Articolo
Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors
Articolo
Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots
Articolo
The Transverse Field Detector (TFD): a novel color sensitive CMOS device
Articolo
The impact of gate-oxide breakdown on SRAM stability
Articolo
Very Fast and Priming-less Single-Crystal Diamond X-ray Dosimeters
Articolo
Voltage dependence of hard breakdown growth and the reliability implication in thin devices
Articolo
Voltage-controlled relaxation oscillations in phase-change memory devices
Articolo
No Results Found
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