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EPJ. APPLIED PHYSICS (PRINT)
Rivista
Codice:
E060835
ISSN:
1286-0042
Dati Generali
Dati Generali
Pubblicazioni (19)
Pulisci
Ordina Pubblicazioni:
ascendente
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A study of anion Exchange Reactions at GaAs surfaces for heterojunction interface control
Articolo
A vibration-free, thermally controlled setup for mechanical thermal noise measurements
Articolo
Chemical efficiency of reactive microflows with heterogeneous catalysis: a lattice Boltzmann study
Articolo
Effect of N+ irradiation on the microstructural and magnetic properties of Co/Pd multilayers
Articolo
Film forming properties of electrosprayed organic heterojunctions
Articolo
Homogeneous and heterogeneous switching in antiferroelectric liquid crystals
Articolo
Identification of hydrogen related defects in proton implanted float-zone silicon
Articolo
In-depth analysis of the interfaces in InGaAs/InGaP heterosystem
Articolo
Lateral conductivity in GaAs/InAs quantum dot structures
Articolo
Monte Carlo simulation of nearly kinematic shock fronts in rarefied gases
Articolo
Nanoimprint and micro-contact printing trilayer processes
Articolo
Near-field imaging of the photocurrent on a patterned Au/GaAs interface with various wavelengths and bias
Articolo
Optical and electrical anisotropy of ordered layers of rigid core semiconductor - dithienothiophene derivative
Articolo
Remote plasma asisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry
Articolo
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM
Articolo
Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC
Articolo
The hysteresis cycle of concentration in a solution droplet under changing humidity
Articolo
Wavy growth and related defects in strain-balanced multi-quantum wells for photovoltaic devices
Articolo
Write and erase mechanism of surface controlled bistable nematic pixel
Articolo
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