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PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH

Rivista

Codice:

E131760

ISSN:

0031-8965

Dati Generali

Dati Generali

Pubblicazioni (63)

Ordina Pubblicazioni:

ascendente
decrescente

An FTIR study of hexamethylenetetramine in porous silicon

Articolo

Anti-stokes luminescence in high quality quantum wells

Articolo

Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells

Articolo

Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation

Articolo

COPPER IMPURITIES AND THEIR ANNEALING BEHAVIOR IN FZ SILICON

Articolo

Carrier transfer between InGaAs/GaAs quantum wells separated by thick barriers

Articolo

Chemical contrast observed at a III-V heterostructure by scanning near-field optical microscopy

Articolo

Combined Solid Phase Crystallization and Excimer Laser Annealing Process for Polysilicon Thin-Film Transistors

Articolo

DEPENDENCE OF I-V CHARACTERISTICS OF GaAs n plus -n-n plus DIODES ON THE ACTIVE REGION LENGTH

Articolo

Dislocations in A-III-B-VI single-crystals

Articolo

Doping in silicon nanostructures

Articolo

EFFECT OF PASSIVATING OXIDES ON THE SURFACE RECOMBINATION VELOCITY IN SILICON

Articolo

EFFECTS OF SILICON ION-BEAM MIXING ON P+/N DIODES - DLTS ANALYSES OF THE INDUCED DEFECTS

Articolo

Electrochemical fabrication of buried folded microchannels into silicon substrates

Articolo

Electron-electron correlation in silicon anisotropic quantum dots

Articolo

Electron-hole dynamics in MOCVD-grown InGaAs/GaAs quantum dots emitting at 1.3 mu m

Articolo

Electronic levels and recombination lifetimes for quantum wires in a magnetic field

Articolo

Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 × 1 surfaces

Articolo

Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages

Articolo

Exchange coupling in symmetric Co/Cr/Co trilayer: a Brillouin light scattering study

Articolo

Excitonic and free carrier recombination in InxGa1-xAs/GaAs V-shaped quantum wire for different in content

Articolo

Experimental evidence of bistability in a semiconductor microcavity

Articolo

Experimental multi-techniques apparatus for optical properties of quantum structures

Articolo

First experimental results with the free electron laser coupled to a scanning near-field optical microscope

Articolo

Gettering of Fe at the End of Range Loops in Fe-Implanted InP

Articolo

Growth of R1+xBa2-xCu3O7-delta epitaxial films investigated by in situ scanning tunneling microscopy

Articolo

Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE

Articolo

Hopping conduction mechanism in Na-faujasiste zeolites

Articolo

Hydrogen precipitation in highly oversaturated single-crystalline silicon

Articolo

INTRINSIC GETTERING OF CR IMPURITIES IN P-TYPE CZ SILICON

Articolo

Impurity and topological surface states in porous silicon

Articolo

Influence of surface and subsurface defects on the behavior of the rutile TiO2(110) surface

Articolo

Interface applications of scanning near-field optical microscopy with a free electron laser

Articolo

Intrinsic defect related photoluminescence in TeO2- based glasses

Articolo

LATTICE DISORDER AND RECOMBINATION CENTERS IN HEAT-TREATED FZ SILICON

Articolo

LIFETIME AND CRYSTAL ORDER IN ANNEALED CZ SILICON

Articolo

Magnetic measurements of critical currents in Ag-BPSCCO tapes: A comparison

Articolo

Near-field Imaging of the photocurrent induced by light on boron-implanted silicon

Articolo

Near-field imaging of the photocurrent induced by light on boron-implanted silicon

Articolo

Nonradiative and radiative recombination processes of zns epitaxial layers

Articolo

ON THE CONNECTION BETWEEN INTERSTITIAL OXYGEN, OXYGEN PRECIPITATE, AND DIFFUSIONS OF CR AND CU IMPURITIES IN CZ SILICON

Articolo

On the influence of dislocations on the luminescence of Si : Er

Articolo

On the role of the static Debye-Waller factor in X-ray rocking curve analysis

Articolo

Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells

Articolo

Plasmas for the low-temperature growth of high-quality gan films by molecular beam epitaxy and remote plasma MOCVD

Articolo

Remote plasma MOCVD growth and processing of GaN: A study by real time ellipsometry

Articolo

Second harmonic generation in a molecular magnetic chain

Contributo in Atti di convegno

Second harmonic generation in stepped InAsGaAs/GaAs quantum wells

Articolo

Some Electrical Characteristics of Fe and Its Annealing Behaviour in FZ Silicon

Articolo

Steady-state and time-resolved near-field optical spectroscopy of gan/aln quantum dots and ingan/gan quantum wells

Articolo

Structural and functional characterization of HPHT diamond crystals used in photoconductive devices

Articolo

Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques

Articolo

THE EFFECTS OF HIGH-TEMPERATURE ANNEAL ON THE ELECTRICAL-ACTIVITY OF IRON IN B-DOPED CZ SILICON

Articolo

Temporal response of CVD diamond detectors to modulated low energy X-ray beams

Articolo

The chemistry of sapphire nitridation in relation to the GaN structural quality: Why low temperature 200 degrees C nitridation?

Articolo

The temperature dependence of the infrared absorption and Raman spectra due to boron in diamond

Articolo

Thermally Stimulated Current in Na-Fau Zeolite

Articolo

Thermoresistive and piezoresistive properties of wurtzite N-GaN

Articolo

Thickness Dependence of Electrical and Structural Properties of Nb Thin Films

Articolo

Use of the EBIC contrast profile area for evaluating the recombination strength of dislocation

Articolo

Visible and Infrared photoluminescence from ebium-doped silicon nanocrystals produced by rf sputtering

Articolo

Why does diamond absorb infra-red radiation?

Articolo

X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source

Articolo

No Results Found

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