A new self consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTS.

Academic Article
Publication Date:
2003
abstract:
Iris type:
01.01 Articolo in rivista
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/22640