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Electric Field Reconstruction and Transport Parameter Evaluation in CZT X-Ray Detectors

Articolo
Data di Pubblicazione:
2017
Abstract:
The laser-induced current technique has been successful used to reconstruct the spatial profile of the electric field along the thickness of a set of CdZnTe spectroscopic X-ray detectors. Current transient profiles for electrons at different applied voltages have been analyzed by means of a minimization procedure demonstrating its applicability to samples with thickness ranging from 250 mu m to 4 mm. Mobility and lifetime of electrons have also been deduced and compared with the mobility-lifetime products, as evaluated by fitting the charge collection efficiency curves under a suitable electric field profile model. Comparison between results from both techniques gives a good agreement and confirms the validity of the procedure. This method results applicable each time that carrier transit times can be evaluated from the laser-induced current transients. It could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e., with a sufficiently low density of free carriers in dark conditions.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
II-VI compound semiconductor devices; carrier transport; laser-induced transient-current technique (TCT); semiconductor device modeling; X-ray detectors
Elenco autori:
Bettelli, Manuele; Zappettini, Andrea
Autori di Ateneo:
BETTELLI MANUELE
ZAPPETTINI ANDREA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/351074
Pubblicato in:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Journal
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URL

http://ieeexplore.ieee.org/document/8016412/
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