Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties

A study of the structure and transport properties of highly textured, epitaxial oriented BaZr0.8Y0.2O3-x thin films grown on NdGaO3(110) is reported. Films have been grown by pulsed laser deposition and their conductivity studied as a function of temperature and thickness. The results show an increased conductance as the sample thickness decreases. The measured conductivity corresponding to an in-plane conductivity of 20 S cm-1 has been systematically observed in the range of 550-600 °C for several 10 nm-thick films. The high values of conductivity are possibly related to the high densities of defects, mostly dislocations at the interface of the film with the substrate