Structural properties of annealed SiO(x)

On the basis of recent results, concerning the quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer and based on electron energy loss spectroscopy (EELS) and energy-filtered transmission electron microscopy, in this paper we demonstrate that the structural properties of Si nanoclusters (Si ncs) strongly depend on the technique used for specimen preparation In particular here we report on annealed SiO(x) films prepared by plasma enhanced chemical vapour deposition (PECVD) and magnetron sputtering, showing that their structural properties are very different It is shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration occurs in sputtered films These data are explained on the basis of the different initial structural properties of the as-deposited films which become crucial for the subsequent evolution