ELECTRICAL DOPING PROFILES ON TEXTURIZED SURFACES.

The texture etching on (100) Si surfaces produces an array of pyramids of 1-10 mu m base dimension. Texturized surfaces are used as wideband anti-reflection structures in Si solar cell technology. Doping techniques are then performed on the so obtained non-planar surfaces. For a complete characterization of solar cells it is important to measure the electrically active dopant concentration vs depth. To determine this profile, the authors used an automatic apparatus that combines differential Hall effect and resistivity measurement with anodic stripping of successive layers. This technique implies the knowledge of the angle between the vectors of carrier drift velocities and magnetic field in which the sample is placed. In texturized samples this angle is not constant. The aim of the work is to show the applicability of the technique on these kinds of samples.