Electrical characterization of engineered ZnSe/GaAs heterojunction diodes

lectrical characterization of ZnSe-GaAs n-p heterodiodes grown by molecular beam epitaxy under different View the MathML source flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV. Achievement of device-grade heterostructures with engineered offsets is shown under appropriate growth conditions.