Progress in fabrication of high quality tantalum film absorber for STJ radiation detector
Academic Article
Publication Date:
2004
abstract:
We report the fabrication and characterization of high quality tantalum films as absorbers for STJ radiation detectors. Values of the residual resistance ratio up to 75 and bulk value of the superconducting transition temperature T-c = 4.5 +/- 0.1 K have been achieved. Devices for detection with lateral aluminum superconducting tunnel junctions have been fabricated on such films. The detector response to X-ray is discussed. (C) 2003 Elsevier B.V. All rights reserved.
Iris type:
01.01 Articolo in rivista
Keywords:
superconducting tunnel junction detector; epitaxial thin film growing; residual resistance ratio
List of contributors: