Localized Laser Trimming of Critical Current in Niobium Based Josephson Devices

A thermal annealing technique for Nb/Al-AlOx /Nb Josephson devices based on laser heating is presented. This technique allows "locally" modifying the Josephson critical current density, which is not possible using standard procedures based on oven or hot plate heating. In fact, the heating of a single circuit element with a good spatial resolution is possible. At room temperature, the selected junction is exposed to a focused Ar+ laser beam aligned by an optical system. A thermographic imaging allows controlling the temperature distribution on the whole chip. Experimental results on high quality Josephson junction measured in liquid helium have shown a continuous reduction of the critical current density up to about 40%. Neighboring junctions have not exhibited any measurable change ensuring the capability to locally modify the Josephson critical current density. As first application, the present technique has been employed to recover noisy dc superconducting quantum interference device magnetometers with nonoptimal critical current values obtaining a reduction of the spectrum density of magnetic field noise from about 30 to 2.5 fT/Hz1/2. © 2007 American Institute of Physics