XPS and AFM microstructural study on Ge/Si (100) (2x1) grown by UHV-CVD

Ge/Si and GexSi1-x heteroepitaxy is currently drawing a large scientific and technological attention due to its potential use in the design of new electrical and optoelettronical devices arising form the succesful integration of these syructures in the Si-based IC technology. Ge films grown on Si (100) (2x1) by UHV-CVD were analysed by means of AFM, XPS and RBS. The morphological variation obesrved in the samples deposited at different Ts in the range 325°C-450°C can be related to the variation of Ge mobility and H desorption rate governed by the substrate temperature.