Growth of Metal-Mediated Si Nanowires by LPCVD

Conference Paper
Publication Date:
2005
abstract:
Silicon nanowires (NW) were grown on Si substrates via a Vapour-Liquid-Solid mechanism by Low-Pressure Chemical Vapour Deposition (LPCVD) from a disilane source. The influence of the growth parameters such as metal amount, operating pressure and substrate temperature and preparation on the Si NW morphology and structure has been investigated by SEM and XPS.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Nanowires; silicon; CVD
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/15715
Book title:
Proceeding of the 1st International Conference on Sensing Technology