Data di Pubblicazione:
2005
Abstract:
Silicon nanowires (NW) were grown on Si substrates via a Vapour-Liquid-Solid mechanism by Low-Pressure
Chemical Vapour Deposition (LPCVD) from a disilane source. The influence of the growth parameters such as
metal amount, operating pressure and substrate temperature and preparation on the Si NW morphology and
structure has been investigated by SEM and XPS.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Nanowires; silicon; CVD
Elenco autori:
Orlando, Stefano; Ragone, PIETRO PASQUALE
Link alla scheda completa:
Titolo del libro:
Proceeding of the 1st International Conference on Sensing Technology