Polycrystalline aluminum nitride thin films prepared by laser assisted Al and NH3 reaction

Aluminum nitride thin films have been fabricated by reaction of laser evaporated Al in a NH3 atmosphere. The results indicate that AlN may deposit on a suitable substrate in a hexagonal crystal structure. A fairly dense homogeneous texture of the film surface morphology is seen by scanning electron microscopy SEM.. The main process parameters to produce layers of this material have been investigated.