Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature B350C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.