AlN and GaN epitaxial heterojunctions on 6H-SiC (0001): Valence band offsets and polarization fields

Academic Article
Publication Date:
1999
Iris type:
01.01 Articolo in rivista
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/130919
Published in:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B
Journal