Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2 , MoS2 , and WSe2

report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of 1-ML-thick, H2-filled domes. The electronic properties of the curved MLs are mapped by spatially and time-resolved microphotoluminescence, revealing the mechanical stress conditions that trigger the variation of the band gap character. This general phenomenon, also observed in MoS2 and WSe2, further increases our understanding of the electronic structure of transition metal dichalcogenide MLs and holds a great relevance for their optoelectronic applications.