Quantum diffusion of H(D) in semiconductors and metals, and the role of the interaction with impurities

The investigation of the dynamics of hydrogen diffusion (HD) in GaAs doped with Zn revealed a dissipation peak at 20 K in the kHz range. This relaxation has the highest rate found for H in a semiconductor: more than 15 orders of magnitude higher than in all the other semiconductors measured so far. The analysis of the dissipation curves clearly indicates that the nature of the H reorientation is quantistic.