Data di Pubblicazione:
2005
Abstract:
The solid solubility of As in silicon, the ionisation equilibria at different dopant concentrations and temperatures
and the algorithms that describe these phenomena are reviewed and discussed. Experimental
evidence of the occurrence of different types of clusters is presented. The correlation of clustering equilibria
with As diffusivity is shown by suitable experiments. Finally we report and discuss the kinetics of As
deactivation and the influence of excess point defects on the clustering process.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Solmi, Sandro
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