Thermal decapping of As-capped GaAs (100) surfaces: a scanning probe microscopy study

Conference Paper
Publication Date:
1996
abstract:
As capping represents one of the most important ways of protecting the GaAs (100) surface from air oxidation during the transfer from the MBE chamber to another UHV system not directly coonected with it. The paper describes the most relevant results achied by scanning probe microscopy on GaAs surfaces after thermal decapping of As-capped GaAs (100) surfaces.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
SEMICONDUCTOR; GaAs; Scanning probe microscopy; X-RAY PHOTOELECTRON SPECTROSCOPY; GROWTH MODEL
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/129212
Book title:
ECASIA 1995 - Proceedings of the European Conference on Applications of Surface and Interface Analysis