Thermal decapping of As-capped GaAs (100) surfaces: a scanning probe microscopy study

As capping represents one of the most important ways of protecting the GaAs (100) surface from air oxidation during the transfer from the MBE chamber to another UHV system not directly coonected with it. The paper describes the most relevant results achied by scanning probe microscopy on GaAs surfaces after thermal decapping of As-capped GaAs (100) surfaces.