Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process

Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 x 10(-9) A/cm(2), and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691181]