InP grown by low-pressure MOVPE using dimethylindium pyrazole

An unusual liquid organoindium precursor for MOVPE was sinthetised, purified and tested for homo- and hetero-epitaxial growth of InP. The good quality of the obtained epilayers was tested by Hall and PL measurements. The measured growth rate is low (0.2 mu m/h), and constant in a wide temperature range (580 divided by 680 degrees C). This makes dimethyl indium pyrazole a good candidate for the growth of In-based MQW structures. InP nanostructures on a GaAs substrate were also grown using the same precursor.