MOCVD route to chromium carbonitride thin films using Cr(NEt2)(4) as single-source precursor: Growth and mechanism

Chromium carbonitride coatings with a low nitrogen content were deposited by low pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)(4) as single-source precursor. As-deposited films are amorphous and crystallize upon annealing at 873 K to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases by increasing the growth temperature. This dependence has been correlated to their microstructure. Quantitative H-1 NMR analysis of the by-products of the MOCVD reaction has been performed. The quasi-equimolecular ratio of the by-products EtN=CHMe and HNEt2 suggests that most of the NEt2 ligands are removed by a stepwise mechanism, which is discussed.