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C49-C54 phase transition in nanometric titanium disilicide nanograins

Academic Article
Publication Date:
2002
abstract:
The first order C49-C54 phase transition was studied in single TiSi grains embedded in a Si matrix by transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700-1100 °C temperature range. The fraction of C54 increases with temperature and the steady state value is reached in times of about 60 s. The data are interpreted in terms of heterogeneous nucleation at the silicide-silicon interface.
Iris type:
01.01 Articolo in rivista
List of contributors:
LA VIA, Francesco
Authors of the University:
LA VIA FRANCESCO
Handle:
https://iris.cnr.it/handle/20.500.14243/52437
Published in:
MICROELECTRONIC ENGINEERING
Journal
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