Data di Pubblicazione:
2002
Abstract:
The first order C49-C54 phase transition was studied in single TiSi grains
embedded in a Si matrix by transmission electron microscopy and X-ray
diffraction. The fraction of material transformed into C54 was determined
at different times during the annealing in the 700-1100 °C temperature
range. The fraction of C54 increases with temperature and the steady state
value is reached in times of about 60 s. The data are interpreted in
terms of heterogeneous nucleation at the silicide-silicon interface.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
LA VIA, Francesco
Link alla scheda completa:
Pubblicato in: