A Theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration

Academic Article

Publication Date:

1997

abstract:

By combining tight-binding molecular dynamics and restricted Hartree-Fock calculations we present a quantitative picture for chemical bond in silicon when point defects are present.

Iris type:

01.01 Articolo in rivista

List of contributors:

Gatti, CARLO EDOARDO; Cargnoni, Fausto

Authors of the University:

CARGNONI FAUSTO

Handle:

https://iris.cnr.it/handle/20.500.14243/207801

Published in:

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Journal