A Theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration
Articolo
Data di Pubblicazione:
1997
Abstract:
By combining tight-binding molecular dynamics and restricted Hartree-Fock calculations we present a quantitative picture for chemical bond in silicon when point defects are present.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Gatti, CARLO EDOARDO; Cargnoni, Fausto
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