Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures
Academic Article
Publication Date:
1996
abstract:
(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.
Iris type:
01.01 Articolo in rivista
Keywords:
Raman scattering; atomic force microscopy
List of contributors:
Labardi, Massimiliano
Published in: