Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures

(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.