Scanning capacitance microscopy of semiconductor materials

Scanning capacitance microscopy is a powerful technique to determine carrier distribution in semiconductors with high sensitivity ( 10(14) - 10(20) cm(-3)). We demonstrate that its spatial resolution (nearly 10 nm) can be improved in the two dimensions (depth and lateral) by double angle bevelling the sample. In this paper sample preparation, measurement method and carrier profiling are carefully described and some examples of applications to materials and Si devices are given.