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Thin films of Zr1-xSnxTiO4 for application in microelectronics

Conference Paper
Publication Date:
2000
abstract:
Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of XPS technique. Surface segregation of Sn-IV and the presence of Sn-0, Ti-II, and Ti-III species in the films were revealed from XPS depth profiles.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Kaciulis, Saulius
Handle:
https://iris.cnr.it/handle/20.500.14243/215785
Book title:
COMMAD 2000 PROCEEDINGS
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