Reliability of RF MEMS switches due to charging effects and their circuital modelling
Academic Article
Publication Date:
2010
abstract:
The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure.
Iris type:
01.01 Articolo in rivista
Keywords:
Charging effect; Equivalent circuit model; RF-MEMS switches; Models; Electric switches
List of contributors:
Lucibello, Andrea; DE ANGELIS, Giorgio; Bartolucci, Giancarlo; Proietti, Emanuela; Marcelli, Romolo
Published in: