Fabrication of submicron-scale srtio3- devices by an atomic force microscope

Atomic force microscopy was used for the fabrication of submicron-scale SrTiO3-? devices. As compared to the as-grown films, the modified regions show different electrical and structural properties which can be used to develop submicrometer circuits. A 400 nm wide sidegate field gate effect transistor was reported which has a resistance modulation of 4% with gate electric fields of 1MV/cm.