Low Frequency Noise Measurements in p-type Metal-Base Vertical Organic Transistors

We present, for the first time, Low Frequency Noise measurements in Vertical Organic Transistors. Investigated devices are p-type Metal-Base Organic Transistors employing Pentacene and Copper Phthalocyanine as active layers for the Emitter and Collector regions, respectively. The power spectral densities measured at the Base and Collector terminals follow a 1/f gamma law, with gamma approximate to 1, suggesting that noise is generated, in both cases, by a continuous distribution of traps. Cross-correlation measurements show that Base current noise and Collector current noise are uncorrelated meaning that the physical origin of the noise measured at the Base and Collector terminals is different.